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Power Innovations Limited - NPN SILICON POWER TRANSISTORS

Numéro de référence TIP29F
Description NPN SILICON POWER TRANSISTORS
Fabricant Power Innovations Limited 
Logo Power Innovations Limited 





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TIP29F fiche technique
Copyright © 1997, Power Innovations Limited, UK
TIP29D, TIP29E, TIP29F
NPN SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
q 30 W at 25°C Case Temperature
q 1 A Continuous Collector Current
q 3 A Peak Collector Current
q Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
TIP29D
TIP29E
TIP29F
TIP29D
TIP29E
TIP29F
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
160
180
200
120
140
160
5
1
3
0.4
30
2
32
-65 to +150
-65 to +150
250
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = 20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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