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PDF TIP140 Data sheet ( Hoja de datos )
| Número de pieza | TIP140 | |
| Descripción | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | ON Semiconductor | |
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1. TIP140  Hay una vista previa y un enlace de descarga de TIP140 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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TIP140, TIP141, TIP142,
(NPN); TIP145, TIP146,
TIP147, (PNP)
Darlington Complementary
Silicon Power Transistors
Designed for general−purpose amplifier and low frequency
switching applications.
Features
• High DC Current Gain −
Min hFE = 1000 @ IC
= 5.0 A, VCE = 4 V
• Collector−Emitter Sustaining Voltage − @ 30 mA
VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145
= 80 Vdc (Min) − TIP141, TIP146
= 100 Vdc (Min) − TIP142, TIP147
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current
− Continuous
− Peak (Note 1)
Base Current − Continuous
Total Power Dissipation
@ TC = 25_C
Operating and Storage
Junction Temperature Range
Symbol
VCEO
VCB
VEB
IC
TIP140
TIP145
60
60
TIP141
TIP146
80
80
5.0
10
15
TIP142
TIP147
100
100
IB 0.5
PD 125
TJ, Tstg
−65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
1.0 °C/W
Thermal Resistance,
Junction−to−Ambient
RqJA
35.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 5 ms, v 10% Duty Cycle.
http://onsemi.com
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 6
1
Publication Order Number:
TIP140/D
1 page  
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
ACTIVE−REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
20
10
7.0
5.0
3.0 dc
2.0 TJ = 150°C
SECONDARY BREAKDOWN LIMIT
1.0 BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
0.2
10
15 20
TIP140, 145
TIP141, 146
TIP142, 147
30
50
70
100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Active−Region Safe Operating Area
15
10
7.0
5.0
100 mJ
2.0
1.0
0.5 1.0 2.0 5.0 10 20 50 100
L, UNCLAMPED INDUCTIVE LOAD (mH)
Figure 7. Unclamped Inductive Load
INPUT
MPS-U52
50
50
RBB1
1.5 k
RBB2
= 100
VBB2 = 0
VBB1 = 10 V
VCE MONITOR
100 mH
TUT
VCC = 20 V
IC
MONITOR
RS = 0.1
INPUT
VOLTAGE
COLLECTOR
CURRENT
1.42 A
VCE(sat)
- 20 V
COLLECTOR
VOLTAGE
w ≈ 7.0 ms (SEE NOTE 1)
5.0 V
100 ms
0
0
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
V(BR)CER
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TIP140.PDF ] | |
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