DataSheetWiki


TICP206M fiches techniques PDF

Power Innovations Limited - SILICON TRIACS

Numéro de référence TICP206M
Description SILICON TRIACS
Fabricant Power Innovations Limited 
Logo Power Innovations Limited 





1 Page

No Preview Available !





TICP206M fiche technique
Copyright © 1997, Power Innovations Limited, UK
TICP206 SERIES
SILICON TRIACS
MARCH 1988 - REVISED MARCH 1997
q 1.5 A RMS
q Glass Passivated Wafer
q 400 V to 600 V Off-State Voltage
q Max IGT of 10 mA
G
MT2
MT1
LP PACKAGE
(TOP VIEW)
1
2
3
q Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
MDC2AA
MT2
1
2
3
MT1
MDC2AB
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
TICP206D
TICP206M
SYMBOL
VDRM
IT(RMS)
ITSM
ITSM
IGM
PG(AV)
TC
Tstg
TL
VALUE
400
600
1.5
10
12
±0.2
0.3
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
A
W
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 60 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDRM
Repetitive peak off-
state current
VD = rated VDRM
IGTM
VGTM
Peak gate trigger
current
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
† All voltages are with respect to Main Terminal 1.
TEST CONDITIONS
IG = 0
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
MIN TYP MAX UNIT
±20 µA
8
-8
mA
-8
10
2.5
-2.5
V
-2.5
2.5
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

PagesPages 7
Télécharger [ TICP206M ]


Fiche technique recommandé

No Description détaillée Fabricant
TICP206 SILICON TRIACS Power Innovations Limited
Power Innovations Limited
TICP206D SILICON TRIACS Power Innovations Limited
Power Innovations Limited
TICP206M SILICON TRIACS Power Innovations Limited
Power Innovations Limited

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche