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Power Innovations Limited - SILICON TRIACS

Numéro de référence TIC246M
Description SILICON TRIACS
Fabricant Power Innovations Limited 
Logo Power Innovations Limited 





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TIC246M fiche technique
Copyright © 2000, Power Innovations Limited, UK
TIC246 SERIES
SILICON TRIACS
DECEMBER 1971 - REVISED JUNE 2000
G High Current Triacs
G 16 A RMS
G Glass Passivated Wafer
G 400 V to 800 V Off-State Voltage
G 125 A Peak Current
G Max IGT of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC246D
Repetitive peak off-state voltage (see Note 1)
TIC246M
TIC246S
TIC246N
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
SYMBOL
VDRM
IT(RMS)
ITSM
IGM
TC
Tstg
TL
VALUE
400
600
700
800
16
125
±1
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current
VD = rated VDRM
IG = 0
TC = 110°C
±2 mA
Gate trigger
IGT current
Gate trigger
VGT voltage
VT On-state voltage
IH Holding current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
ITM = ±22.5 A
Vsupply = +12 V†
Vsupply = -12 V†
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
RL = 10
IG = 50mA
IG = 0
IG = 0
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
(see Note 4)
Init’ ITM = 100 mA
Init’ ITM = -100 mA
12
-19
-16
34
0.8
-0.8
-0.8
0.9
±1.4
22
-12
50
-50
-50
2
-2
-2
2
±1.7
40
-40
mA
V
V
mA
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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