TIC106S Datasheet PDF - Power Innovations Limited
| Part Number | TIC106S | |
| Description | SILICON CONTROLLED RECTIFIERS | |
| Manufacturers | Power Innovations Limited | |
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Copyright © 1997, Power Innovations Limited, UK
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
q 5 A Continuous On-State Current
q 30 A Surge-Current
q Glass Passivated Wafer
q 400 V to 800 V Off-State Voltage
q Max IGT of 200 µA
TO-220 PACKAGE
(TOP VIEW)
K1
A2
G3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIC106D
Repetitive peak off-state voltage (see Note 1)
TIC106M
TIC106S
TIC106N
TIC106D
Repetitive peak reverse voltage
TIC106M
TIC106S
TIC106N
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse width ≤ 300 µs)
Peak gate power dissipation (pulse width ≤ 300 µs)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
VDRM
VRRM
IT(RMS)
IT(AV)
ITM
IGM
PGM
PG(AV)
TC
Tstg
TL
400
600
700
800
400
600
700
800
5
3.2
30
0.2
1.3
0.3
-40 to +110
-40 to +125
230
V
V
A
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
TC20AA
VAA = 6 V
RL = 100 Ω
tp(g) ≥ 20 µs
100
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
TC20AB
1
VAA = 6 V
0·8 RL = 100 Ω
RGK = 1 kΩ
tp(g) ≥ 20 µs
0·6
0·4
0·2
10
-50
-25 0
25 50 75 100
TC - Case Temperature - °C
Figure 7.
125
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
TC20AC
10
IA = 0
TC = 25 °C
tp = 300 µs
Duty Cycle ≤ 2 %
0
-50
10
-25 0
25 50 75 100 125
TC - Case Temperature - °C
Figure 8.
HOLDING CURRENT
vs
CASE TEMPERATURE
TC20AD
VAA = 6 V
RGK = 1 kΩ
Initiating IT = 10 mA
1
0·1
0·1
1 10 100
IGF - Gate Forward Current - mA
Figure 9.
1000
1
-50 -25 0 25 50 75 100 125
TC - Case Temperature - °C
Figure 10.
PRODUCT INFORMATION
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TIC106S electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ TIC106S.PDF Datasheet ] | |
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