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Toshiba Semiconductor - TOSHIBA Zener Diode Silicon Diffused-Junction Type

Numéro de référence U5ZA40C
Description TOSHIBA Zener Diode Silicon Diffused-Junction Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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U5ZA40C fiche technique
TOSHIBA Zener Diode Silicon Diffused-Junction Type
U5ZA40C
Best Suited for Overvoltage Protection of Electronic
System:
Electronic System for Use in Automobiles
Electronic System for Commercial Use
Electronic System for Industrial Use
For Communications, Controls, Measuring Instruments,
etc.
U5ZA40C
Unit: mm
· High surge power withstanding capabilities that absorb load dump
surge.
· Excellent surge responsibility for steep surge absorption.
· Surface mount type is available for easy applications.
· Corresponds to taping packages.
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Allowable power dissipation (Note1)
Non-repetitive peak reverse surge
current
(see figure 1 for the exponents.)
Peak one cycle surge forward current
(single half sine-wave, t = 10 ms)
Junction temperature
Storage temperature
P
IRSM
IFSM
Tj
Tstg
Note1: Lead tip temperature TL = 25°C
Rating
5
62
Unit
W
A
700
-40~150
-40~150
A
°C
°C
JEDEC
JEITA
TOSHIBA
3-11J2A
Weight: 2.5 g (typ.)
IRSM
IRSM
2
0 10 ms
Figure 1
1 2003-02-17

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