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TZX8V2B fiches techniques PDF

Diodes Incorporated - 500mW EPITAXIAL PLANAR ZENER DIODE

Numéro de référence TZX8V2B
Description 500mW EPITAXIAL PLANAR ZENER DIODE
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





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TZX8V2B fiche technique
TZX2V4 - TZX36C
500mW EPITAXIAL PLANAR ZENER DIODE
Features
· Planar Die Construction
· 500mW Power Dissipation on FR-4 PCB
· General Purpose, Medium Current
ABA
Mechanical Data
· Case: DO-35, Glass
· Leads: Solderable per MIL-STD-202,
Method 208
· Marking: Type Number
· Polarity: Cathode Band
· Weight: 0.35 grams (approx.)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Zener Current (See Table on page 2)
Forward Voltage
@ IF = 200mA
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
¾
VF
Pd
RqJA
Tj, TSTG
D
DO-35
Dim Min Max
A 25.40 ¾
B ¾ 4.00
C ¾ 0.60
D ¾ 2.00
All Dimensions in mm
Value
¾
1.5
500
300
-65 to +175
Notes: 1. Valid provided that leads are kept at ambient temperature.
2. Tested with pulses, t £ 1.0ms.
C
Unit
¾
V
mW
K/W
°C
DS30089 Rev. 1P-5
1 of 4
TZX2V4 - TZX36C

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