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PDF UTCML1225 Data sheet ( Hoja de datos )
| Número de pieza | UTCML1225 | |
| Descripción | The XL1225/ML1225 silicon controlled rectifiers | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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XL/ML1225
DESCRIPTION
The XL1225/ML1225 silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts
are intended for low cost high volume applications.
SCR
1
TO-92
1:CATHODE 2:GATE 3:ANODE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS
PART NO. SYMBOL
TEST
MIN. MAX. UNITS
CONDITION RATING RATING
Repetitive Peak Off-State Voltage
XL1225
VDRM Tj=40 to 125°C 400
V
ML1225
VDRM
(rgk=1kΩ)
300
On-State Current
IT(RMS)
Tc=40°C
0.8
A
Average On-State Current
IT(AV) Half Cycle=180, 0.5
A
Tc=40°C
Peak Reverse Gate Voltage
VGRM
IGR=10uA
1
V
Peak Gate Current
IGM
10us Max.
0.1
A
Gate Dissipation
PG(AV)
20ms Max.
150
W
Operating Temperature
Tj -40 125 °C
Storage Temperature
TSTG
-40 125 °C
Soldering Temperature
TSLD 1.6mm from case
250 °C
10s Max.
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Off state leakage current
IDRM
@VDRM(RGK=1KΩ), Tj=125°C
Off state leakage current
IDRM
@VDRM(RGK=1KΩ), Tj=25°C
On state voltage
VT
AT IT=0.4A
AT IT=0.8A
On state threshold voltage
VT(TO)
Tj=125°C
On state slops resistance
Rt
Tj=125°C
Gate trigger current
IGT
VD=7V
Gate trigger voltage
VGT
VD=7V
Holding current IH RGK=1KΩ
Latching current
IL
RGK=1KΩ
Critical rate of voltage rise
DV/DT
VD=0.67*VDRM(RGK=1KΩ),
Tj=125°C
Critical rate of current rise
DV/DT
IG=10mA, dIG/dt=0.1A/µs,
Tj=125°C
Gate controlled delay time
TGD
IG=10mA, dIG/dt=0.1A/µs,
Commutated turn-off time
TG Tj=85°C, VD=0.67*VDRM,
VR=35V, IT=IT(AV)
MIN
MAX
0.1
1.0
1.4
2.2
0.95
600
200
0.8
5
6
500
200
UNIT
mA
µA
V
V
m
µA
V
mA
mA
V/µs
A/µs
µs
µs
UTC UNISONIC TECHNOLOGIES CO. LTD
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet UTCML1225.PDF ] | |
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