|
|
Numéro de référence | UTC2SA733 | ||
Description | LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR | ||
Fabricant | Unisonic Technologies | ||
Logo | |||
UTC2SA733
NPNEPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA733 is an low frequency amplifier.
FEATURES
*Collector-Emitter voltage:
BVCBO=-50V
*Collector current up to –150mA
*High hFE linearity
*Complimentary to 2SC945
1
TO-92
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
-60
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
VEBO
-5
Collector Dissipation(Ta=25°C)
Pc
250
Collector Current
Ic -150
Junction Temperature
Tj 125
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO
Ic=-100µA, IE=0
-60
Collector-Emitter Breakdown Voltage BVCEO
IC=-10mA,IB=0
-50
Collector Cut-Off Current
ICBO
VCB=-40V,IE=0
Emitter Cut-Off Current
IEBO
VEB=-3V,Ic=0
DC Current Gain(note)
hFE1
VCE=-6V,Ic=-1mA
90
TYP
MAX
-100
-100
600
UNIT
V
V
nA
nA
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
VCE(sat)
fT
Cob
NF
Ic=-100mA,IB=-10mA
VCE=-10V,Ic=-50mA
VCB=-10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=-6V
RG=10kΩ,f=100Hz
-0.1 -0.3 V
100 190
MHz
2.0 3.0 pF
4.0 6.0 dB
UTC UNISONIC TECHNOLOGIES CO. LTD 1
|
|||
Pages | Pages 2 | ||
Télécharger | [ UTC2SA733 ] |
No | Description détaillée | Fabricant |
UTC2SA733 | LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR | Unisonic Technologies |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |