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Fairchild Semiconductor - P-Channel 2.5V Specified PowerTrenchTM MOSFET

Numéro de référence USB10P
Description P-Channel 2.5V Specified PowerTrenchTM MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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USB10P fiche technique
June 1999
USB10P
P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
Features
This P -Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for battery power
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
-4.5 A, -20 V. RDS(ON) = 0.045 @ VGS = -4.5 V
RDS(ON) = 0.065 @ VGS = -2.5 V.
Low gate charge (13nC typical).
High performance trench technology for extremely low
RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D
D
S
pin 1
SuperSOTTM-6
G
D
D
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise note
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
16
25
34
Ratings
-20
±8
-4.5
-20
1.6
0.8
-55 to 150
78
30
Units
V
V
A
W
°C
°C/W
°C/W
©1999 Fairchild Semiconductor Corporation
USB10P Rev.D

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