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UPG175TA fiches techniques PDF

NEC - L-Band PA DRIVER AMPLIFIER

Numéro de référence UPG175TA
Description L-Band PA DRIVER AMPLIFIER
Fabricant NEC 
Logo NEC 





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UPG175TA fiche technique
PRELIMINARY DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG175TA
L-Band PA DRIVER AMPLIFIER
DESCRIPTION
µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC
(Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the
high gain and low distortion.
FEATURES
• Low Operation Voltage: VDD1 = VDD2 = 3.0 V
• fRF: 925 to 960 MHz@ Pout = +9 dBm
• Low distortion: Padj1 = –60 dBc typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V
External input and output matching
• Low operation Current: IDD = 20 mA typ. @ VDD = 3.0 V, Pout = +9 dBm, VAGC = 2.5 V
External input and output matching
• Variable gain control function: G = 35 dB typ. @ VAGC = 0.5 to 2.5 V
• 6 pin mini-mold package
APPLICATION
• Digital Cellular: PDC800M, etc.
ORDERING INFORMATION (PLAN)
PART NUMBER
µPG175TA-E3
PACKAGE
6 pin Mini-mold
PACKING FORM
Carrier tape width is 8 mm, Quantity is 3 kpcs per reel.
Remark For sample order, please contact your local NEC sales office. (Part number for sample order: µPG175TA)
Caution The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs HJ-FET.
The information in this document is subject to change without notice.
Document No. P13470EJ1V0DS00 (1st edition)
Date Published May 1998 N CP(K)
Printed in Japan
©
1998

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