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UPG139GV fiches techniques PDF

NEC - L-BAND DPDT MMIC SWITCH

Numéro de référence UPG139GV
Description L-BAND DPDT MMIC SWITCH
Fabricant NEC 
Logo NEC 





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UPG139GV fiche technique
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG139GV
L-BAND DPDT MMIC SWITCH
DESCRIPTION
The µPG139GV is L-Band Double Pole, Double Throw (DPDT) switch developed for digital cellular or cordless
telephone and PCS applications. This device feature low insertion loss, high handling power with low voltage
operation. It is housed in a very small 8-pin plastic SSOP package available on tape-and-reel and easy to install and
contributes to miniaturizing the systems.
FEATURES
{ High-Power Switching : Pin(1 dB) = +34 dBm typ. @ANT1, 2-TX, VDD = 3.0 V, VCONT = 3.6 V, f = 100 M to 2 GHz
Pin(0.5 dB) = +36 dBm typ. @ANT1, 2-TX, VDD = 5.0 V, VCONT = 5.0 V, f = 100 M to 2 GHz
{ Low Insertion Loss : Lins1 = 0.70 dB typ. @ANT1, 2-TX, VDD = 3.0 V, VCONT = 3.6 V, f = 1 GHz
Lins4 = 0.85 dB typ. @ANT1, 2-RX, VDD = 3.0 V, VCONT = 3.6 V, f = 1 GHz
{ Small 8-pin SSOP (175 mil) Package
APPLICATION
{ Digital Cellular: PDC, GSM, IS-95, IS-136 etc.
{ PCS, PHS Base station etc.
ORDERING INFORMATION
Part Number
µPG139GV-E1
Package
8-pin SSOP (175 mil)
Packing Form
Carrier tape width is 12 mm, Quantity is 2 kpcs per reel.
Remark For sample order, please contact your local NEC sales office. (Part number for sample order: µPG139GV)
Caution The IC must be handled with care to prevent static discharge because its circuit composed of GaAs
MESFET.
The information in this document is subject to change without notice.
Document No. P13144EJ2V0DS00 (2nd edition)
Date Published July 1998 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1998

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