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PDF UPG110P Data sheet ( Hoja de datos )
| Número de pieza | UPG110P | |
| Descripción | 2 to 8 GHz WIDE BAND AMPLIFIER CHIP | |
| Fabricantes | NEC | |
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DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG110P
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
DESCRIPTION
The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And
the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of
the microwave communication system and the measurement equipment.
FEATURES
• Ultra wide band : 2 to 8 GHz
• High Power Gain : GP = 15 dB TYP.
@f = 2 to 8 GHz
• Medium Power : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz
ORDERING INFORMATION
PART NUMBER
µPG110P
FORM
Chip
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Supply Voltage
Input Voltage
Input Power
Total Power Dissipation
Operating Temperature
Storage Temperature
VDD
VIN
Pin
Ptot*1
Topr*2
Tstg
+10
–5 to +0.6
+10
1.5
–65 to +125
–65 to +125
V
V
dBm
W
°C
°C
*1 Mounted with AuSn hard solder
*2 The temperature of base material beside the chip
RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)
Supply Voltage
Input Power
VDD
Pin
+8 ± 0.2
–5
V
dBm
Document No. P11882EJ2V0DS00 (2nd edition)
(Previous No. ID-2454)
Date Published September 1996 P
Printed in Japan
© 1989
1 page  
µPG110P
RECOMMENDED CHIP ASSEMBLY CONDITIONS
Die Attachment
Atmosphere : N2 gas
Temperature : 320 ± 5 °C
AuSn Preform : 0.5 × 0.5 × 0.05t (mm), 1 pce.
* The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not
be used.
Base Material : CuW, Cu, KV
* Other material should not be used.
Epoxy Die Attach is not recommended.
Bonding
Machine
: TCB
* USB is not recommended
Wire
: 30 µm diameter Au wire
Temperature : 260 ± 5 °C
Strength
: 31 ± 3 g
Atmosphere : N2 gas
Chip Bonding Diagram
VDD
50 to
100 µm
200 to 500 µm
less than 300 µ m
5
VDD GND
500 to
1 000 µm
IN
OUT
200 to
500 µm
GND
1
2
GND
GND
3
GND 4
not used
less than 200 µm
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPG110P.PDF ] | |
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