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Numéro de référence | VHB50-28F | ||
Description | NPN SILICON RF POWER TRANSISTOR | ||
Fabricant | Advanced Semiconductor | ||
Logo | |||
VHB50-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB50-28F is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 6.5 A
VCBO
65 V
VCEO
35 V
VEBO
4.0 V
PDISS
TJ
TSTG
θJC
75W
-65 OC to +200 OC
-65 OC to +150 OC
2.3 OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
A
Ø.125 NOM.
FULL R
J
.125
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10728
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
MINIMUM
BVCEO
IC = 200 mA
35
BVCES
IC = 200 mA
65
BVEBO
IE = 10 mA
4.0
ICBO
ICES
VCB = 30 V
VCE = 30 V
TC = 125 OC
hFE VCE = 5.0 V
IC = 500 mA
5.0
TYPICAL
MAXIMUM
2.0
10
---
UNITS
V
V
V
mA
mA
---
Cob VCB = 28 V
f = 1.0 MHz
80 pF
fT VCE = 10 V
PG VCE = 28 V
ηC
IC = 500 mA
POUT =50 W
f = 100 MHz
f = 175 MHz
200
6.0
60
MHz
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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Pages | Pages 1 | ||
Télécharger | [ VHB50-28F ] |
No | Description détaillée | Fabricant |
VHB50-28F | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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