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VHB1-12T fiches techniques PDF

Advanced Semiconductor - NPN SILICON RF POWER TRANSISTOR

Numéro de référence VHB1-12T
Description NPN SILICON RF POWER TRANSISTOR
Fabricant Advanced Semiconductor 
Logo Advanced Semiconductor 





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VHB1-12T fiche technique
VHB1-12T
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB1-12T is Designed for
FEATURES:
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 400 mA (MAX)
VCBO
40 V
VCEO
20 V
VCER
40 V
VEBO
PDISS
TJ
TSTG
θJC
2.0 V
3.5 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
20 OC/W
PACKAGE STYLE TO-39
B
ØA
C
45°
ØD
E
F
GH
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A .200 / 5.080
B .029 / 0.740
.045 / 1.140
C .028 / 0.720
.034 / 0.860
D .335 / 8.510
.370 / 9.370
E .305 / 7.750
.335 / 8.500
F .240 / 6.100
.260 / 6.600
G .500 / 12.700
H .016 / 0.407
.020 / 0.508
ORDER CODE: ASI10711
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 5.0 mA
BVCER
IC = 5.0 mA
RBE = 10
BVEBO
IE = 100 µA
ICEO
VCE = 12 V
hFE VCE = 5.0 V
IC = 100 mA
VCE(SAT)
IC = 100 mA
IB = 20 mA
MINIMUM TYPICAL MAXIMUM
20
40
2.0
0.2
10 200
0.5
UNITS
V
V
V
mA
---
Vdc
COB VCB = 12.5 V
f = 1.0 MHz
4.0 pF
PG
VCE = 12.5 V
POUT = 1.0 W
f = 175 MHz
10
ηC
60
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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