VG36128401BT Datasheet PDF - Vanguard International Semiconductor
| Part Number | VG36128401BT | |
| Description | CMOS Synchronous Dynamic RAM | |
| Manufacturers | Vanguard International Semiconductor | |
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VIS
VG36128401BT / VG36128801BT / VG36128161BT
CMOS Synchronous Dynamic RAM
Description
The VG36128401B, VG36128801B and VG3664128161B are high-speed 134,217,728-bit synchro-
nous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4 and 2,097,152 x
16 x 4 (word x bit x bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All input
and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are compatible
with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII.
Features
• Single 3.3V (±0.3V ) power supply
• High speed clock cycle time -7H: 133MHz<2-2-2>, -7L: 133MHz<3-3-3>, -8H: 100MHz<2-2-2>
• Fully synchronous operation referenced to clock rising edge
• Possible to assert random column access in every cycle
• Quad internal banks controlled by BA0 & BA1 (Bank Select)
• Byte control by LDQM and UDQM for VG36128161DT
• Programmable Wrap sequence (Sequential / Interleave)
• Programmable burst length (1, 2, 4, 8 and full page)
• Programmable /CAS latency (2 and 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• X4, X8, X16 organization
• LVTTL compatible inputs and outputs
• 4,096 refresh cycles / 64ms
.
Document :1G5-0183
Rev.1
Page 1
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VIS
VG36128401BT / VG36128801BT / VG36128161BT
CMOS Synchronous Dynamic RAM
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Value
Unit
Supply Voltage
VDD with respect to VSS
-0.5 to 4.6
V
Supply Voltage for Output
VDDQ
with respect to VSSQ
-0.5 to 4.6
V
Input Voltage
VI with respect to VSS
-0.5 to 4.6
V
Output Voltage
VO with respect to VSSQ
-0.5 to 4.6
V
Short circuit output current
IO
50 mA
Power dissipation
PD Ta = 25 °C
1W
Operating temperature
TOPT
0 to 70
°C
Storage temperature
TSTG
-65 to 150
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The
device is not meant to be operated under conditions outside the limits described in the operational section of this
specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions (Ta = 0 ~ 70 °C, unless otherwise noted)
Parameter
Symbol
Min.
Limits
Typ.
Supply Voltage
VDD
3.0
3.3
Supply Voltage for DQ
VDDQ
3.0
3.3
Ground
VSS
0
0
Ground for DQ
VSSQ
0
0
High Level Input Voltage (all inputs)
VIH
2.0
Low Level Input Voltage (all inputs)
VIL
-0.3
Max.
3.6
3.6
0
0
VDDQ + 0.3
0.8
Unit
V
V
V
V
V
V
Pin Capacitance (Ta = 0 ~ 70°C, VDD = VDDQ = 3.3 ± 0.3V , VSS = VSSQ = 0V, unless otherwise noted)
Parameter
Symbol
Limits (Min)
Limits (Max)
-7H -7L/-8H
Input Capacitance, address & control pin
CIN
2.5
3.8
5.0
Input Capacitance, CLK pin
CCLK
2.5
3.5
4.0
Data input / output capacitance
CI/O
4.0
6.5
6.5
Unit
pF
pF
pF
Document :1G5-0183
Rev.1
Page 5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for VG36128401BT electronic component. |
| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ VG36128401BT.PDF Datasheet ] | |
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