PDF V58C365164S Data sheet ( Hoja de datos )

Número de pieza	V58C365164S
Descripción	64 Mbit DDR SDRAM 4M X 16/ 3.3VOLT
Fabricantes	Mosel Vitelic Corp
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MOSEL VITELIC V58C365164S 64 Mbit DDR SDRAM 4M X 16, 3.3VOLT PRELIMINARY System Frequency (fCK) Clock Cycle Time (tCK3) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK2) 36 275 MHz 3.6 ns 4.3ns 5.4ns 4 250 MHz 4 ns 4.8 ns 6 ns 5 200 MHz 5 ns 6 ns 7.5 ns Features ■ 4 banks x 1Mbit x 16 organization ■ High speed data transfer rates with system frequency up to 275 MHz ■ Data Mask for Write Control (DM) ■ Four Banks controlled by BA0 & BA1 ■ Programmable CAS Latency: 2, 2.5, 3 ■ Programmable Wrap Sequence: Sequential or Interleave ■ Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type ■ Automatic and Controlled Precharge Command ■ Suspend Mode and Power Down Mode ■ Auto Refresh and Self Refresh ■ Refresh Interval: 4096 cycles/64 ms ■ Available in 66-pin 400 mil TSOP-II ■ SSTL-2 Compatible I/Os ■ Double Data Rate (DDR) ■ Bidirectional Data Strobe (DQs) for input and output data, active on both edges ■ On-Chip DLL aligns DQ and DQs transitions with CLK transitions ■ Differential clock inputs CLK and CLK ■ Power supply 3.3V ± 0.3V ■ VDDQ (I/O) power supply 2.5 + 0.2V Description The V58C365164S is a four bank DDR DRAM organized as 4 banks x 1Mbit x 16. The V58C365164S achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock All of the control, address, circuits are synchro- nized with the positive edge of an externally sup- plied clock. I/O transactions are possible on both edges of DQS. Operating the four memory banks in an inter- leaved fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is pos- sible depending on burst length, CAS latency and speed grade of the device. Device Usage Chart Operating Temperature Range 0°C to 70°C Package Outline JEDEC 66 TSOP II • CLK Cycle Time (ns) -36 -4 -5 • •• Power Std. • L • Temperature Mark Blank V58C365164S Rev. 1.7 March 2002 1 1 page MOSEL VITELIC V58C365164S Functional Description ■ Power-Up Sequence The following sequence is required for POWER UP. 1. Apply power and attempt to maintain CKE at a low state (all other inputs may be undefined.) - Apply VDD before or at the same time as VDDQ. - Apply VDDQ before or at the same time as VTT & Vref. 2. Start clock and maintain stable condition for a minimum of 200us. 3. The minimum of 200us after stable power and clock (CLK, CLK), apply NOP & take CKE high. 4. Precharge all banks. 5. Issue EMRS to enable DLL.(To issue “DLL Enable” command, provide “Low” to A0, “High” to BA0 and “Low” to all of the rest address pins, A1~A11 and BA1) 6. Issue a mode register set command for “DLL reset”. The additional 200 cycles of clock input is required to lock the DLL. (To issue DLL reset command, provide “High” to A8 and “Low” to BA0) 7. Issue precharge commands for all banks of the device. 8. Issue 2 or more auto-refresh commands. 9. Issue a mode register set command to initialize device operation. Note1 Every “DLL enable” command resets DLL. Therefore sequence 6 can be skipped during power up. Instead of it, the additional 200 cycles of clock input is required to lock the DLL after enabling DLL. Power up Sequence & Auto Refresh(CBR) CK, CK Command 01 23 45 678 •• •• 2 Clock min. 2 Clock min. precharge ALL Banks EMRS MRS DLL Reset tRP precharge ALL Banks 1st Auto Refresh 200 µS Power up to 1st command min. 200 Cycle 456 7 8 9 10 11 12 13 14 15 16 17 18 19 •• tRFC •• •• 2nd Auto Refresh •• tRFC •• •• 2 Clock min. Mode Register Set Any Command 8 Extended Mode Register Set (EMRS) The extended mode register stores the data for enabling or disabling DLL. The default value of the extend- ed mode register is not defined, therefore the extended mode register must be written after power up for en- abling or disabling DLL. The extended mode register is written by asserting low on CS, RAS, CAS, WE and high on BA0 (The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the extended mode register). The state of address pins A0 ~ A11 and BA1 in the same cycle as CS, RAS, CAS and WE low is written in the extended mode register. Two clock cycles are required to complete the write operation in the extended mode register. The mode register contents can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state. A0 is used for DLL enable or disable. “High” on BA0 is used for EMRS. All the other address pins except A0 and BA0 must be set to low for proper EMRS operation. A1 is used at EMRS to indicate I/O strength A1 = 0 full strength, A1 = 1 half strength. Refer to the table for specific codes. V58C365164S Rev. 1.7 March 2002 5 5 Page MOSEL VITELIC V58C365164S Data Strobe Preamble and Postamble Timings for DDR Read Cycles (CAS Latency = 2; Burst Length = 2) T0 T1 T2 T3 T4 CK, CK Command DQS DQ READ NOP tRPRE(min) NOP NOP tRPRE(max) tRPST(min) tDQSQ(min) tRPST(max) D0 D1 tDQSQ(max) Consecutive Burst Read Operation and Effects on the Data Strobe Preamble and Postamble Burst Read Operation (CAS Latency = 2; Burst Length = 4) CK, CK Command DQS DQ ReadA NOP ReadB NOP NOP NOP NOP NOP D0A D1A D2A D3A D0B D1B D2B D3B Burst Read Operation (CAS Latency = 2; Burst Length = 4) CK, CK Command DQS DQ ReadA NOP NOP ReadB NOP NOP NOP NOP D0A D1A D2A D3A D0B D1B D2B D3B NOP NOP V58C365164S Rev. 1.7 March 2002 11 11 Page

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