V53C806H50 Datasheet PDF - Mosel Vitelic Corp
| Part Number | V53C806H50 | |
| Description | HIGH PERFORMANCE 1M x 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM | |
| Manufacturers | Mosel Vitelic Corp | |
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MOSEL VITELIC
V53C806H
HIGH PERFORMANCE
1M x 8 BIT FAST PAGE MODE
CMOS DYNAMIC RAM
PRELIMINARY
HIGH PERFORMANCE
Max. RAS Access Time, (tRAC)
Max. Column Address Access Time, (tCAA)
Min. Fast Page Mode Cycle Time, (tPC)
Min. Read/Write Cycle Time, (tRC)
Features
s 1M x 8-bit organization
s Fast Page Mode for a sustained data rate of
43 MHz
s RAS access time: 40, 45, 50, 60 ns
s Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh capability
s Refresh Interval: 1024 cycle/16 ms
s Available in 28-pin 400 mil SOJ package
s Single +5V ±10% Power Supply
s TTL Interface
40
40 ns
20 ns
23 ns
75 ns
45
45 ns
22 ns
25 ns
80 ns
50
50 ns
24 ns
28 ns
90 ns
60
60 ns
30 ns
40 ns
120 ns
Description
The V53C806H is a ultra high speed 1,048,576 x
8 bit CMOS dynamic random access memory. The
V53C806H offers a combination of features: Fast
Page Mode for high data bandwidth, and Low
CMOS standby current.
All inputs and outputs are TTL compatible. Input
and output capacitances are significantly lowered to
allow increased system performance. Fast Page
Mode operation allows random access of up to
1024 x 8 bits within a row with cycle times as fast as
23 ns. Because of static circuitry, the CAS clock is
not in the critical timing path. The flow-through col-
umn address latches allow address pipelining while
relaxing many critical system timing requirements.
The V53C806H is ideally suited for graphics, dig-
ital signal processing and high-performance com-
puting systems.
Device Usage Chart
Operating
Temperature
Range
0°C to 70 °C
Package Outline
K
•
Access Time (ns)
40 45 50 60
••••
Power
Std.
•
Temperature
Mark
Blank
V53C806H Rev. 1.6 April 1998
1
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MOSEL VITELIC
V53C806H
AC Characteristics
TA = 0°C to 70°C, VCC = 5 V ±10%, VSS = 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
# Symbol
1 tRAS
2 tRC
3 tRP
4 tCSH
5 tCAS
6 tRCD
7 tRCS
8 tASR
9 tRAH
10 tASC
11 tCAH
12 tRSH (R)
13 tCRP
14 tRCH
15 tRRH
16 tROH
17 tOAC
18 tCAC
19 tRAC
20 tCAA
21 tLZ
22 tHZ
23 tAR
24 tRAD
25 tRSH (W)
26 tCWL
27 tWCS
28 tWCH
29 tWP
40 45 50 60
Parameter
Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
RAS Pulse Width
40 75K 45 75K 50 75K 60 75K ns
Read or Write Cycle Time
75 80 90 110 ns
RAS Precharge Time
25 25 30 40 ns
CAS Hold Time
40 45 50 60 ns
CAS Pulse Width
12 13 14 15 ns
RAS to CAS Delay
17 28 18 32 19 36 20 43 ns
Read Command Setup Time
0
0
0
0 ns 4
Row Address Setup Time 0 0 0 0 ns
Row Address Hold Time
7 8 9 10 ns
Column Address Setup Time
0
0
0
0 ns
Column Address Hold Time
5
6
7 10 ns
RAS Hold Time (Read Cycle)
12
13
14
15 ns
CAS to RAS Precharge Time
5
5
5
5 ns
Read Command Hold Time
0
0
0
0 ns 5
Referenced to CAS
Read Command Hold Time
0
0
0
0 ns 5
Referenced to RAS
RAS Hold Time Referenced to OE 8
9 10 10 ns
Access Time from OE
12 13 14 17 ns
Access Time from CAS
12 13 14 17 ns 6, 7
Access Time from RAS
40 45 50 60 ns 6, 8, 9
Access Time from Column Address
20
22
24
30 ns 6, 7, 10
CAS to Low-Z Output
0 0 0 0 ns 16
Output buffer turn-off delay time
0 6 0 7 0 8 0 10 ns 16
Column Address Hold Time
30
35
40
45 ns
from RAS
RAS to Column Address
12 20 13 23 14 26 15 30 ns 11
Delay Time
RAS or CAS Hold Time in Write
12
13
14
15 ns
Cycle
Write Command to CAS Lead Time 12 13 14 15 ns
Write Command Setup Time
0
0
0
0 ns 12, 13
Write Command Hold Time
5
6
7 10 ns
Write Pulse Width
5 6 7 10 ns
V53C806H Rev. 1.6 April 1998
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for V53C806H50 electronic component. |
| Information | Total 18 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ V53C806H50.PDF Datasheet ] | |
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