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PDF V436416S04VCTG-75 Data sheet ( Hoja de datos )
| Número de pieza | V436416S04VCTG-75 | |
| Descripción | 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE | |
| Fabricantes | Mosel Vitelic Corp | |
| Logotipo |  |
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MOSEL VITELIC
V436416S04V(C)TG-75
3.3 VOLT 16M x 64 HIGH PERFORMANCE
PC133 UNBUFFERED SDRAM MODULE
PRELIMINARY
Features
s 168 Pin Unbuffered 16,777,216 x 64 bit
Oganization SDRAM DIMMs
s Utilizes High Performance 8M x 8 SDRAM in
TSOPII-54 Packages
s Fully PC Board Layout Compatible to INTEL’S
Rev 1.0 Module Specification
s Single +3.3V (± 0.3V) Power Supply
s Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
s Auto Refresh (CBR) and Self Refresh
s All Inputs, Outputs are LVTTL Compatible
s 4096 Refresh Cycles every 64 ms
s Serial Present Detect (SPD)
s SDRAM Performance
Component Used
tCK Clock Frequency (max.)
tAC Clock Access Time CAS
Latency = 3
-7 Units
143 MHz
5.4 ns
s Supported Latencies at 133 MHz Operation
CL tRCD tRP
tRC
3 3 3 8 CLK
Description
The V436416S04V(C)TG-75 memory module is
organized 16,777,216 x 64 bits in a 168 pin dual in
line memory module (DIMM). The 16M x 64 memo-
ry module uses 16 Mosel-Vitelic 8M x 8 SDRAM.
The x64 modules are ideal for use in high perfor-
mance computer systems where increased memory
density and fast access times are required.
V436416S04V(C)TG-75 Rev. 1.7 September 2001
1
V436416S04V(C)TG-75-01
1 page  
MOSEL VITELIC
SPD-Table for PC133 modules: (Continued)
Byte Number Function Described
31 Module Bank Density (Per Bank)
32 SDRAM Input Setup Time
33 SDRAM Input Hold Time
34 SDRAM Data Input Setup Time
35 SDRAM Data Input Hold Time
62-61
Superset Information (May be used in Future)
62 SPD Revision
63 Checksum for Bytes 0 - 62
64 Manufacturer’s JEDEC ID Code
65-71
Manufacturer’s JEDEC ID Code (cont.)
72 Manufacturing Location
73-90
Module Part Number (ASCII)
91-92
PCB Identification Code
93 Assembly Manufacturing Date (Year)
94 Assembly Manufacturing Date (Week)
95-98
Assembly Serial Number
99-125
Reserved
126 Intel Specification for Frequency
127 Reserved
128+
Unused Storage Location
DC Characteristics
TA = 0°C to 70°C; VSS = 0 V; VDD, VDDQ = 3.3V ± 0.3V
Symbol Parameter
VIH
VIL
VOH
VOL
II(L)
IO(L)
Input High Voltage
Input Low Voltage
Output High Voltage (IOUT = –2.0 mA)
Output Low Voltage (IOUT = 2.0 mA)
Input Leakage Current, any input
(0 V < VIN < 3.6 V, all other inputs = 0V)
Output leakage current
(DQ is disabled, 0V < VOUT < VCC)
V436416S04V(C)TG-75
SPD Entry Value
64 MByte
1.5 ns
0.8 ns
1.5 ns
0.8 ns
Revision 2
Mosel Vitelic
V436416S04V(C)TG-75
Hex Value
16Mx64
10
15
08
15
08
00
02
8F
40
00
00
64
00
00
Limit Values
Min.
Max.
2.0
–0.5
VCC+0.3
0.8
2.4 —
— 0.4
–10 10
–10 10
Unit
V
V
V
V
µA
µA
V436416S04V(C)TG-75 Rev. 1.7 September 2001
5
5 Page 
MOSEL VITELIC
Label Information
V436416S04V(C)TG-75
Part Number
Criteria of PC100 or PC133
(refer to MVI datasheet)
MOSEL VITELIC
V436416S04VCTG-75
PC133U-333-542-A
Taiwan XXXX-XXXXXXX
DIMM manufacture date code
Trace Code
PC133 U - 333 - 54 2 - A
UNBUFFERED DIMM
CL = 3 (CLK)
tRCD = 3 (CLK)
tRP = 3 (CLK)
Gerber file Intel® PC100 x 8 Based
JEDEC SPD Revision 2.0
tAC = 5.4 ns
V436416S04V(C)TG-75-05
V436416S04V(C)TG-75 Rev. 1.7 September 2001
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet V436416S04VCTG-75.PDF ] | |
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