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Toshiba Semiconductor - TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

Numéro de référence VR4J
Description TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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VR4J fiche technique
TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR4J,TVR4N
TVR4J,TVR4N
High Speed Rectifier Applications (fast recovery)
Unit: mm
· Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V
· Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C)
· Reverse Recovery Time: trr = 20 µs
· Plastic Mold Type.
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak
reverse voltage
TVR4J
TVR4N
Average forward current (Ta = 55°C )
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
Symbol
VRRM
IF (AV)
IFSM
Tj
Tstg
Rating
600
1000
1.2
100 (50 Hz)
-40 to 150
-40 to 150
Unit
V
A
A
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
3-4B1A
Weight: 0.47 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ.
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Thermal resistance (junction to ambient)
VFM
IRRM
trr
Rth (j-a)
IFM = 5 A
VRRM = Rated
IF = 20 mA, IR = 1 mA
DC
¾¾
¾¾
¾¾
¾¾
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Max Unit
1.2 V
10 mA
20 ms
80 °C/W
Marking
Type Code Lot No.
Cathode Mark
Color: Silver
Month (starting from alphabet A)
Year (last number of the christian era)
Code
VR4J
VR4N
Type
TVR4J
TVR4N
1 2002-09-18

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