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Supertex Inc - P-Channel Enhancement-Mode Vertical DMOS FETs

Numéro de référence VP2110
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Fabricant Supertex Inc 
Logo Supertex  Inc 





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VP2110 fiche technique
VP2110
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-to-drain diode
High input impedance and high gain
Applications
General Description
The Supertex VP2110 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package Options
TO-236AB (SOT-23)
Die*
BVDSS/BVDGS
(V)
VP2110
VP2110K1-G
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available
VP2110ND
-100
Pin Configuration
DRAIN
RDS(ON)
(max)
(Ω)
12
ID(ON)
(min)
(mA)
-500
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
SOURCE
GATE
TO-236AB (SOT-23) (K1)
Product Marking
P1AW
W = Code for Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-236AB (SOT-23) (K1)
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com

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