DataSheet.es    


PDF VNS3NV04D Data sheet ( Hoja de datos )

Número de pieza VNS3NV04D
Descripción FULLY AUTOPROTECTED POWER MOSFET
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



Hay una vista previa y un enlace de descarga de VNS3NV04D (archivo pdf) en la parte inferior de esta página.


Total 14 Páginas

No Preview Available ! VNS3NV04D Hoja de datos, Descripción, Manual

® VNS3NV04D
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
RDS(on)
VNS3NV04D 120 m(*)
Ilim
3.5 A (*)
Vclamp
40 V (*)
(*)Per each device
n LINEAR CURRENT LIMITATION
)n THERMAL SHUT DOWN
t(sn SHORT CIRCUIT PROTECTION
cn INTEGRATED CLAMP
un LOW CURRENT DRAWN FROM INPUT PIN
dn DIAGNOSTIC FEEDBACK THROUGH INPUT
roPIN
Pn ESD PROTECTION
ten DIRECT ACCESS TO THE GATE OF THE
lePOWER MOSFET (ANALOG DRIVING)
on COMPATIBLE WITH STANDARD POWER
sMOSFET
bDESCRIPTION
OThe VNS3NV04D is a device formed by two
-monolithic OMNIFET II chips housed in a
)standard SO-8 package. The OMNIFET II are
t(sdesigned in STMicroelectronics VIPower M0-3
cTechnology: they are intended for replacement of
ustandard Power MOSFETS from DC up to 50KHz
rodBLOCK DIAGRAM
SO-8
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
lete P DRAIN1
bso OVERVOLTAGE
O CLAMP
DRAIN2
OVERVOLTAGE
CLAMP
INPUT1
GATE
CONTROL
GATE
CONTROL
INPUT2
OVER
TEMPERATURE
LINEAR
CURRENT
LIMITER
LINEAR
CURRENT
LIMITER
OVER
TEMPERATURE
SOURCE1
SOURCE2
September 2013
DocID7396 Rev 4
1/14
1

1 page




VNS3NV04D pdf
VNS3NV04D
PROTECTION FEATURES
- OVERTEMPERATURE AND SHORT CIRCUIT
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
PROTECTION: these are based on sensing the
chip temperature and are not dependent on the
input voltage. The location of the sensing element
on the chip in the power stage area ensures fast,
The device then behaves like a standard power accurate detection of the junction temperature.
MOSFET and can be used as a switch from DC to Overtemperature cutout occurs in the range 150 to
50KHz. The only difference from the user’s 190 °C, a typical value being 170 °C. The device is
standpoint is that a small DC current IISS (typ. automatically restarted when the chip temperature
100µA) flows into the INPUT pin in order to supply falls of about 15°C below shut-down temperature.
the internal circuitry.
- STATUS FEEDBACK: in the case of an
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
)internally set at 45V, along with the rugged
t(savalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
cenergy handling capability. This feature is mainly
uimportant when driving inductive loads.
d- LINEAR CURRENT LIMITER CIRCUIT: limits
rothe drain current ID to Ilim whatever the INPUT pin
voltage. When the current limiter is active, the
Pdevice operates in the linear region, so power
tedissipation may exceed the capability of the
heatsink. Both case and junction temperatures
leincrease, and if this phase lasts long enough,
ojunction temperature may reach the
Obsolete Product(s) - Obsovertemperature threshold Tjsh.
overtemperature fault condition (Tj > Tjsh), the
device tries to sink a diagnostic current Igf through
the INPUT pin in order to indicate fault condition. If
driven from a low impedance source, this current
may be used in order to warn the control circuit of
a device shutdown. If the drive impedance is high
enough so that the INPUT pin driver is not able to
supply the current Igf, the INPUT pin will fall to 0V.
This will not however affect the device
operation: no requirement is put on the current
capability of the INPUT pin driver except to be
able to supply the normal operation drive
current IISS.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
5/14
1

5 Page





VNS3NV04D arduino
VNS3NV04D
Normalized Input Threshold Voltage Vs. Normalized Current Limit Vs. Junction
Temperature
Temperature
Vinth (V)
2
Ilim (A)
10
1.8
1.6 Vds=Vin
Id=1mA
1.4
9
8 Vin=5V
Vds=13V
7
1.2 6
15
0.8
0.6
t(s)0.4
0.2
uc0
d-50 -25 0 25 50 75 100 125 150 175
roTc (ºC)
PStep Response Current Limit
teTdlim(usec)
le13
o12.5
s12 Vin=5V
bRg=220ohm
11.5
O11
-10.5
t(s)10
9.5
c9
u8.5
rod8
7.5
P5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5
Obsolete Vdd(V)
4
3
2
1
0
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
11/14
11

11 Page







PáginasTotal 14 Páginas
PDF Descargar[ Datasheet VNS3NV04D.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
VNS3NV04OMNIFET II: FULLY AUTOPROTECTED POWER MOSFETSTMicroelectronics
STMicroelectronics
VNS3NV04DFULLY AUTOPROTECTED POWER MOSFETSTMicroelectronics
STMicroelectronics
VNS3NV04D-Efully autoprotected Power MOSFETSTMicroelectronics
STMicroelectronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar