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PDF VNQ660SP Data sheet ( Hoja de datos )
| Número de pieza | VNQ660SP | |
| Descripción | QUAD CHANNEL HIGH SIDE SOLID STATE RELAY | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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VNQ660SP
Quad channel high side solid state relay
Features
Type
VNQ660SP
RDS(on)
50mΩ(1)
1. Per each channel.
IOUT
6A
VCC
36V
■ CMOS compatible inputs
■ Off state open load detection
■ Undervoltage and overvoltage shutdown
■ Overvoltage clamp
■ Thermal shutdown
■ Current limitation
■ Very low standby power dissipation
■ Protection against loss of ground and loss of
VCC
■ Reverse battery protection(a)
10
1
PowerSO-10
Description
The VNQ660SP is a monolithic device made by
using| STMicroelectronics VIPower M0-3
Technology, intended for driving resistive or
inductive loads with one side connected to
ground.
This device has four independent channels. Built-
in thermal shutdown and output current limitation
protect the chip from over temperature and short
circuit.
a. See Application schematic on page 16
Table 1. Device summary
Package
PowerSO-10
Tube
VNQ660SP
Order codes
Tape and reel
VNQ660SP13TR
September 2013
Rev 6
1/26
www.st.com
26
1 page  
VNQ660SP
Block diagram and pin description
1 Block diagram and pin description
Figure 1. Block diagram
VCC
INPUT 1
INPUT 2
INPUT 3
INPUT 4
STATUS
LOGIC
STATUS
OVERTEMP. 1
OVERTEMP. 2
OVERTEMP. 3
OVERTEMP. 4
OVERVOLTAGE
UNDERVOLTAGE
DRIVER 1
DEMAG 1
ILIM1
DRIVER 2
DRIVER 3
DRIVER 4
DEMAG 2
ILIM2
DEMAG 3
ILIM3
DEMAG 4
ILIM4
OPEN LOAD
OFF-STATE
GND
OUTPUT 1
OUTPUT 2
OUTPUT 3
OUTPUT 4
Figure 2. Configuration diagram (top view)
STATUS
INPUT 4
INPUT 3
INPUT 2
INPUT 1
6
7
8
9
10
VCC
11
5
4
3
2
1
GND
OUTPUT 4
OUTPUT 3
OUTPUT 2
OUTPUT 1
Table 2. Suggested connections for unused and not connected pins
Connection / pin
Status
N.C.
Output
Input
Floating
To ground
X XX
X
Through 10KΩ
X
resistor
5/26
5 Page 
VNQ660SP
Electrical specifications
Table 12. Electrical transient requirements
ISO T/R
7637/1
Test pulse
I
Test level
II III IV
1
- 25V
- 50V
- 75V
- 100V
2
+ 25V
+ 50V
+ 75V
+ 100V
3a
- 25V
- 50V
- 100V
- 150V
3b
+ 25V
+ 50V
+ 75V
+ 100V
4 - 4V - 5V - 6V - 7V
5
+ 26.5V
+ 46.5V
+ 66.5V
+ 86.5V
Delays and impedance
2ms, 10Ω
0.2ms, 10Ω
0.1µs, 50Ω
0.1µs, 50Ω
100ms, 0.01Ω
400ms, 2Ω
ISO T/R
7637/1
Test pulse
1
2
3a
3b
4
5
I
C
C
C
C
C
C
Test level
II
C
C
C
C
C
E
III
C
C
C
C
C
E
IV
C
C
C
C
C
E
Class
C
E
Contents
All functions of the device are performed as designed after exposure to
disturbance.
One or more functions of the device is not performed as designed after exposure
and cannot be returned to proper operation without replacing the device.
11/26
11 Page | ||
| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet VNQ660SP.PDF ] | |
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