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VNB35NV04 fiches techniques PDF

STMicroelectronics - fully autoprotected Power MOSFET

Numéro de référence VNB35NV04
Description fully autoprotected Power MOSFET
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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VNB35NV04 fiche technique
Features
VNB35NV04
VNV35NV04
OMNIFET II
fully autoprotected Power MOSFET
Datasheet production data
Type RDS(on) Ilim Vclamp
)VNB35NV04 10 mΩ(1)
VNV35NV04
t(s1. For PowerSO-10 only
30 A
40 V
ducLinear current limitation
roThermal shut down
PShort circuit protection
teIntegrated clamp
oleLow current drawn from input pin
sDiagnostic feedback through input pin
ObESD protection
-Direct access to the gate of the Power
)MOSFET (analog driving)
Obsolete Product(sCompatible with standard Power MOSFET
3
1
D2PAK
10
1
PowerSO-10
Description
The VNB35NV04 and VNV35NV04 are monolithic
devices designed in STMicroelectronics®
VIPower® M0-3 Technology, intended for
replacement of standard Power MOSFETs from
DC up to 25 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments. Fault feedback can be detected by
monitoring the voltage at the input pin.
Table 1. Device summary
Package
D2PAK
PowerSO-10
Tube
VNB35NV04
VNV35NV04
Order codes
Tape and reel
VNB35NV0413TR
VNV35NV0413TR
September 2013
This is information on a product in full production.
Doc ID 023692 Rev. 2
1/24
www.st.com
1

PagesPages 24
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