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Supertex Inc - N-Channel Enhancement-Mode Vertical DMOS FET

Numéro de référence VN2410
Description N-Channel Enhancement-Mode Vertical DMOS FET
Fabricant Supertex Inc 
Logo Supertex  Inc 





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VN2410 fiche technique
VN2410
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven, silicon-
gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Ordering Information
Device
Package Option
TO-92
VN2410
VN2410L-G
-G indicates package is RoHS compliant (‘Green’)
BVDSS/BVDGS
(V)
240
RDS(ON)
(max)
(Ω)
10
ID(ON)
(min)
(A)
1.0
Pin Configuration
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
SOURCE
DRAIN
GATE
TO-92 (L)
Product Marking
Si VN YY = Year Sealed
2 4 1 0 L WW = Week Sealed
YYWW
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (L)
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com

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