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X28HT512K-20 fiches techniques PDF

Xicor - High Temperature/ 5 Volt/ Byte Alterable E2PROM

Numéro de référence X28HT512K-20
Description High Temperature/ 5 Volt/ Byte Alterable E2PROM
Fabricant Xicor 
Logo Xicor 





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X28HT512K-20 fiche technique
X28HT512
512K
X28HT512
64K x 8 Bit
High Temperature, 5 Volt, Byte Alterable E2PROM
FEATURES
175°C Full Functionality
Simple Byte and Page Write
—Single 5V Supply
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
Highly Reliable Direct Write™ Cell
—Endurance: 10,000 Write Cycles
—Data Retention: 100 Years
—Higher Temperature Functionality is Possible
by Operating in the Byte Mode
DESCRIPTION
The X28HT512 is an 64K x 8 CMOS E2PROM, fabri-
cated with Xicor’s proprietary, high performance, float-
ing gate CMOS technology which provides Xicor prod-
ucts superior high temperature performance character-
istics. Like all Xicor programmable nonvolatile memo-
ries the X28HT512 is a 5V only device. The X28HT512
features the JEDEC approved pinout for bytewide memo-
ries, compatible with industry standard EPROMS.
The X28HT512 supports a 128-byte page write opera-
tion, effectively providing a 39µs/byte write cycle and
enabling the entire memory to be written in less than 2.5
seconds.
PIN CONFIGURATION
VBB
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
FLAT PACK
CERDIP
SOIC (R)
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
X28HT512
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
6614 FHD F02.1
© Xicor, Inc. 1991, 1995, 1996 Patents Pending
6614-1.5 8/5/97 T2/C0/D0 EW
PGA
I/O0 I/O2 I/O3 I/O5 I/O6
15 17 19 21 22
A1 A0 I/O1 VSS I/O4 I/O7 CE
13 14 16 18 20 23 24
A2 A3
12 11
A10 OE
25 26
A4 A5
10 9
X28HT512
A11 A9
27 28
(BOTTOM VIEW)
A6 A7
87
A8 A13
29 30
A12 A15 NC VCC NC NC A14
6 5 2 36 34 32 31
NC VBB NC WE NC
4 3 1 35 33
6614 FHD F23
1 Characteristics subject to change without notice

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