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PDF X28HT010 Data sheet ( Hoja de datos )
| Número de pieza | X28HT010 | |
| Descripción | High Temperature/ 5 Volt/ Byte Alterable E2PROM | |
| Fabricantes | Xicor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de X28HT010 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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X28HT010
1M
X28HT010
128K x 8 Bit
High Temperature, 5 Volt, Byte Alterable E2PROM
FEATURES
• 175°C Full Functionality
• Simple Byte and Page Write
—Single 5V Supply
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
• Highly Reliable Direct Write™ Cell
—Endurance: 10,000 Write Cycles
—Data Retention: 100 Years
—Higher Temperature Functionality is Possible
by Operating in the Byte Mode.
DESCRIPTION
The Xicor X28HT010 is a 128K x 8 E2PROM, fabricated
with Xicor's proprietary, high performance, floating gate
CMOS technology which provides Xicor products supe-
rior high temperature performance characteristics. Like
all Xicor programmable non-volatile memories the
X28HT010 is a 5V only device. The X28HT010 features
the JEDEC approved pinout for byte-wide memories,
compatible with industry standard EPROMs.
The X28HT010 supports a 256-byte page write opera-
tion, effectively providing a 19µs/byte write cycle and
enabling the entire memory to be typically written in less
than 2.5 seconds.
Xicor E2PROMs are designed and tested for applica-
tions requiring extended endurance. Data retention is
specified to be greater than 100 years.
PIN CONFIGURATIONS
VBB
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
FLAT PACK
CERDIP
SOIC (R)
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
X28HT010
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
6613 FHD F02
© Xicor, Inc. 1991, 1995, 1996 Patents Pending
6613-1.5 8/5/97 T2/C0/D0 EW
1
PGA
I/O0 I/O2 I/O3 I/O5 I/O6
15 17 19 21 22
A1 A0 I/O1 VSS I/O4 I/O7 CE
13 14 16 18 20 23 24
A2 A3
12 11
A10 OE
25 26
A4 A5
X28HT010
A11 A9
10 9
27 28
(BOTTOM VIEW)
A6 A7
87
A8 A13
29 30
A12 A15 NC VCC NC NC A14
6 5 2 36 34 32 31
A16 VBB NC WE NC
4 3 1 35 33
6613 FHD F21
Characteristics subject to change without notice
1 page  
X28HT010
POWER-UP TIMING
Symbol
tPUR(2)
tPUW(2)
Parameter
Power-up to Read Operation
Power-up to Write Operation
CAPACITANCE TA = +25°C, f = 1MHz, VCC = 5V
Symbol
Parameter
CI/O(2)
CIN(2)
Input/Output Capacitance
Input Capacitance
ENDURANCE AND DATA RETENTION
Parameter
Endurance
Data Retention
Min.
10,000
100
Max.
100
5
Max.
10
10
Units
pF
pF
Max.
A.C. CONDITIONS OF TEST
Input Pulse Levels
0V to 3V
Input Rise and
Fall Times
Input and Output
Timing Levels
10ns
1.5V
6613 PGM T08.1
MODE SELECTION
CE OE WE
L LH
LHL
HXX
XLX
XXH
Mode
Read
Write
Standby and
Write Inhibit
Write Inhibit
Write Inhibit
EQUIVALENT A.C. LOAD CIRCUIT
SYMBOL TABLE
Units
µs
ms
6613 PGM T05
Test Conditions
VI/O = 0V
VIN = 0V
6613 PGM T06.1
Units
Cycles per Byte
Years
6613 PGM T07
I/O
DOUT
DIN
High Z
Power
Active
Active
Standby
——
——
6613 PGM T09
5V
WAVEFORM INPUTS
OUTPUTS
1.92KΩ
OUTPUT
1.37KΩ
100pF
6613 FHD F04.3
Note: (2) This parameter is periodically sampled and not 100%
tested.
Must be
steady
May change
from LOW
to HIGH
May change
from HIGH
to LOW
Don’t Care:
Changes
Allowed
N/A
Will be
steady
Will change
from LOW
to HIGH
Will change
from HIGH
to LOW
Changing:
State Not
Known
Center Line
is High
Impedance
5
5 Page 
X28HT010
PACKAGING INFORMATION
36-LEAD CERAMIC PIN GRID ARRAY PACKAGE TYPE K
15 17 19 21 22
13 14 16 18 20 23 24
12 11
25 26
10 9
27 28
87
29 30
6 5 2 36 34 32 31
TYP. 0.180 (.010)
(4.57 ± .25)
4 CORNERS
4 3 1 35 33
TYP. 0.180 (.010)
(4.57 ± .25)
4 CORNERS
PIN 1 INDEX
A
0.008 (0.20)
0.050 (1.27)
A
NOTE: LEADS 5, 14, 23, & 32
TYP. 0.100 (2.54)
ALL LEADS
0.120 (3.05)
0.100 (2.54)
0.072 (1.83)
0.062 (1.57)
0.770 (19.56)
0.750 (19.05)
SQ
0.020 (0.51)
A 0.016 (0.41)
A
0.185 (4.70)
0.175 (4.45)
NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS)
3926 FHD F21
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet X28HT010.PDF ] | |
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