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Numéro de référence | ZDT617 | ||
Description | DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS | ||
Fabricant | Zetex Semiconductors | ||
Logo | |||
1 Page
SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT617
C1
C1
C2
C2
PARTMARKING DETAIL T617
B1
E1
B2
E2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Tj:Tstg
VALUE
15
15
5
12
3
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die on
Both die on equally
Ptot
2W
2.5 W
Derate above 25°C*
Any single die on
Both die on equally
16 mW/ °C
20 mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
62.5 °C/ W
50 °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 327
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Pages | Pages 3 | ||
Télécharger | [ ZDT617 ] |
No | Description détaillée | Fabricant |
ZDT617 | DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS | Zetex Semiconductors |
ZDT619 | DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS | Zetex Semiconductors |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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