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Zetex Semiconductors - DUAL NPN MEDIUM POWER DARLINGTON TRANSISTORS

Numéro de référence ZDT605
Description DUAL NPN MEDIUM POWER DARLINGTON TRANSISTORS
Fabricant Zetex Semiconductors 
Logo Zetex Semiconductors 





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ZDT605 fiche technique
SM-8 DUAL NPN MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT605
C1
C1
C2
C2
PARTMARKING DETAIL – T605
B1
E1
B2
E2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Tj:Tstg
VALUE
140
120
10
4
1
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at Tamb= 25°C*
Any single die “on”
Both die “on” equally
Ptot
2.25 W
2.75 W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18 mW/ °C
22 mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6 °C/ W
45.5 °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
3 - 324

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