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Zetex Semiconductors - DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

Numéro de référence ZDT1147
Description DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS
Fabricant Zetex Semiconductors 
Logo Zetex Semiconductors 





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ZDT1147 fiche technique
SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - AUGUST 1997
ZDT1147
C1 B1
C1 E1
C2 B2
C2 E2
PARTMARKING DETAIL – ZDT1147
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
IB
Tj:Tstg
SM-8
(8 LEAD SOT223)
VALUE
-15
-12
-5
-20
-5
-500
-55 to +150
UNIT
V
V
V
A
A
mA
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Any single die “on”
Both die “on” equally
Ptot
2.0 W
2.75 W
Derate above 25°C*
Any single die “on”
Both die “on” equally
18 mW/ °C
22 mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
55.6 °C/ W
45.5 °C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.

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