|
|
Numéro de référence | YG801C06R | ||
Description | SCHOTTKY BARRIER DIODE | ||
Fabricant | Fuji Electric | ||
Logo | |||
1 Page
YG801C06R
SCHOTTKY BARRIER DIODE
(60V / 5A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
1.2±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
60 V
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=125°C
Square wave
Sine wave 10ms
60
1500
5*
60
V
V
A
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=2.0A
0.58 V
Reverse current **
IR VR=VRRM
5.0 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
5.0 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g
|
|||
Pages | Pages 3 | ||
Télécharger | [ YG801C06R ] |
No | Description détaillée | Fabricant |
YG801C06 | SCHOTTKY BARRIER DIODE | Fuji Electric |
YG801C06R | SCHOTTKY BARRIER DIODE | Fuji Electric |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |