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PDF XPD57045S Data sheet ( Hoja de datos )

Número de pieza XPD57045S
Descripción RF POWER TRANSISTORS The LdmoST Plastic FAMILY
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! XPD57045S Hoja de datos, Descripción, Manual

PD57045
PD57045S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 45 W with 13 dB gain @ 945 MHz / 28V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57045 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57045 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57045’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD57045
XPD57045
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD57045S
XPD57045S
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 0C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS
Tj
Power Dissipation (@ Tc = 70 0C)
Max. Operating Junction Temperature
TSTG Storage Temperature
THERMAL DATA (TCASE = 70 0C)
Rth(j-c) Junction-Case Thermal Resistance
May 2000
Value
65
±20
5
73
165
-65 to 165
1.3
Unit
V
V
A
W
0C
0C
0C/W
1/8

1 page




XPD57045S pdf
TYPICAL PERFORMANCE PD57045S
Output Power vs. Drain Voltage
80
70 f=945MHz
Vdd= 28V
Idq=250mA
60
50
Pin=3W
Pin= 2W
Pin= 1.5W
40
Pin= 1W
30
20
10
16 18 20 22 24 26 28 30 32 34
VDS, DRAIN-SOURCE VOLTAGE (V)
PD57045 PD57045S
Output Power vs. Gate Bias Voltage
50
40
30
20
Pin= 1.5W
10 Vdd= 28V
f = 945 MHz
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS, GATE BIAS VOLTAGE (V)
TEST CIRCUIT PHOTOMASTER
6.4 inches
5/8

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