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STMicroelectronics - RF POWER TRANSISTORS The LdmoST Plastic FAMILY

Numéro de référence XPD57018S
Description RF POWER TRANSISTORS The LdmoST Plastic FAMILY
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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XPD57018S fiche technique
PD57018
PD57018S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 18 W with 14 dB gain @ 960 MHz / 28V
NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57018 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57018 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57018’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE BRANDING
PD57018
XPD57018
PowerSO-10RF
(Straight Lead)
ORDER CODE BRANDING
PD57018S
XPD57018S
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 0C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70 0C)
Tj Max. Operating Junction Temperature
TSTG Storage Temperature
THERMAL DATA (TCASE = 70 0C)
Rth(j-c) Junction-Case Thermal Resistance
Jun 2000
Value
65
±20
2.5
31.7
165
-65 to 175
3.0
Unit
V
V
A
W
0C
0C
0C/W
1/4

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