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PDF XP162A11C0PR Data sheet ( Hoja de datos )
| Número de pieza | XP162A11C0PR | |
| Descripción | Power MOS FET | |
| Fabricantes | Torex Semiconductor | |
| Logotipo |  |
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P-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.28 Ω (max)
Ultra High-Speed Switching
Gate Protect Diode Built-in
SOT - 89 Package
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
General Description
The XP162A11COPR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.15Ω ( Vgs = -10V )
Rds (on) = 0.28Ω ( Vgs = -4.5V )
Ultra high-speed switching
Operational Voltage : -4.5V
Gate protect diode built-in
High density mounting : SOT - 89
Pin Configuration
u
12 3
GDS
SOT - 89 Top View
Equivalent Circuit
1 23
P - Channel MOS FET
( 1 device built-in )
Pin Assignment
PIN NUMBER
1
2
3
PIN NAME
G
D
S
FUNCTION
Gate
Drain
Source
Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
I dp
I dr
Pd
Tch
Tstg
( note ) : When implemented on a ceramic PCB
RATINGS
-30
+ 20
-2.5
-10
-2.5
2
150
-55 to 150
Ta=25OC
UNITS
V
V
A
A
A
W
OC
OC
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet XP162A11C0PR.PDF ] | |
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