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PDF XP152A12COMR Data sheet ( Hoja de datos )
| Número de pieza | XP152A12COMR | |
| Descripción | Power MOS FET | |
| Fabricantes | Torex Semiconductor | |
| Logotipo |  |
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P-Channel Power MOS FET
DMOS Structure
Low On-State Resistance : 0.3Ω (max)
Ultra High-Speed Switching
Gate Protect Diode Built-in
SOT - 23 Package
Applications
Notebook PCs
Cellular and portable phones
On - board power supplies
Li - ion battery systems
General Description
The XP152A12C0MR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.3Ω ( Vgs = -4.5V )
Rds (on) = 0.5Ω ( Vgs = -2.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage : -2.5V
High density mounting : SOT - 23
Pin Configuration
uD
3
12
GS
SOT - 23 Top View
Equivalent Circuit
3
12
P - Channel MOS FET
( 1 device built-in )
Pin Assignment
PIN NUMBER
1
2
3
PIN NAME
G
S
D
FUNCTION
Gate
Source
Drain
Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
I dp
I dr
Pd
Tch
Tstg
( note ) : When implemented on a ceramic PCB
RATINGS
-20
+ 12
-0.7
-2.8
-0.7
0.5
150
-55 to 150
Ta=25OC
UNITS
V
V
A
A
A
W
OC
OC
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet XP152A12COMR.PDF ] | |
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