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PDF XN6543 Data sheet ( Hoja de datos )
| Número de pieza | XN6543 | |
| Descripción | Silicon NPN epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XN6543
Silicon NPN epitaxial planer transistor
For low-noise amplification (2GHz band)
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SC3904 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Ratings
15
10
2
65
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 9Y
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO
VCB = 10V, IE = 0
1 µA
Emitter cutoff current
IEBO VEB = 1V, IC = 0
1 µA
Forward current transfer ratio
hFE
VCE = 8V, IC = 20mA
50 120 300
Forward current transfer hFE ratio hFE (small/large)*1 VCE = 8V, IC = 20mA
0.5 0.99
Transition frequency
fT VCE = 8V, IC = 20mA
7.0 8.5
GHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
0.6 1.0 pF
Forward transfer gain
| S21e |2
VCE = 8V, IC = 20mA, f = 1.5GHz
7
9
dB
Power gain
GUM
VCE = 8V, IC = 20mA, f = 1.5GHz
10 dB
Noise figure
NF VCE = 8V, IC = 7mA, f = 1.5GHz
2.2 3.0 dB
*1 Ratio between 2 elements
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XN6543.PDF ] | |
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