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PDF XN4402 Data sheet ( Hoja de datos )
| Número de pieza | XN4402 | |
| Descripción | Silicon PNP epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XN4402
Silicon PNP epitaxial planer transistor
For general amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SB710 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Ratings
–60
–50
–5
– 0.5
–1
300
150
–55 to +150
Unit
V
V
V
A
A
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: OH
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–60
V
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
VCEO
VEBO
ICBO
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –20V, IE = 0
–50 V
–5 V
– 0.1 µA
Forward current transfer ratio
hFE1
hFE2
VCE = –10V, IC = –150mA*
VCE = –10V, IC = –500mA*
85
40
340
Collector to emitter saturation voltage VCE(sat)
IC = –300mA, IB = –30mA*
– 0.35 – 0.6
V
Base to emitter saturation voltage VBE(sat)
IC = –300mA, IB = –30mA*
–1.1 –1.5
V
Transition frequency
fT VCB = –10V, IE = 50mA, f = 200MHz 200 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
6 15 pF
*Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XN4402.PDF ] | |
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