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IRFIB5N65A fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=5.1A)

Numéro de référence IRFIB5N65A
Description Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=5.1A)
Fabricant International Rectifier 
Logo International Rectifier 





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IRFIB5N65A fiche technique
SMPS MOSFET
PD-91816B
IRFIB5N65A
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l High Voltage Isolation = 2.5KVRMS†
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
HEXFET® Power MOSFET
VDSS
650V
RDS(on) max
0.93
ID
5.1A
TO-220 Full-Pak G D S
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Typical SMPS Topologies
l Single Transistor Flyback
l Single Transistor Forward
Notes  through †are on page 8
www.irf.com
Max.
5.1
3.2
21
60
0.48
± 30
2.8
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
1
6/21/00

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