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Fairchild Semiconductor - Advanced Power MOSFET

Numéro de référence IRFI510A
Description Advanced Power MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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IRFI510A fiche technique
Advanced Power MOSFET
IRFW/I510A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175ΟC Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.289 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25 ΟC) *
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.4
ID = 5.6 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
100
5.6
4
20
+_ 20
63
5.6
3.3
6.5
3.8
33
0.22
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
Characteristic
Typ.
R θJC
R θJA
R θJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
4.51
40
62.5
Units
ΟC/ /W
Rev. B
©1999 Fairchild Semiconductor Corporation

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