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PDF IRFI1310G Data sheet ( Hoja de datos )
| Número de pieza | IRFI1310G | |
| Descripción | Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A) | |
| Fabricantes | International Rectifier | |
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HEXFET® Power MOSFET
PD - 9.1222
IRFI1310G
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Repetitive Avalanche Rated
175°C Operating Temperature
VDSS = 100V
RDS(on) = 0.04Ω
ID = 22A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a high
isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Collector Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
22
15
88
48
0.32
±20
120
22
4.8
5.5
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Min.
––––
Typ.
––––
––––
Max.
3.1
––––
Units
°C/W
65
To Order
Revision 0
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25
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFI1310G
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
S IN G LE P U LS E
(THERM AL RESPONSE)
0.001
0.00001
0.0001
PD M
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ= P D Mx Z thJC + T C
0.001
0.01
0.1
1
t1 , R ectangular P ulse D uration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
To Order
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFI1310G.PDF ] | |
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