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PDF IRFF9120 Data sheet ( Hoja de datos )

Número de pieza IRFF9120
Descripción 4A/ 100V/ 0.60 Ohm/ P-Channel Power MOSFET
Fabricantes Intersil Corporation 
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Data Sheet
IRFF9120
June 1999 File Number 2287.2
4A, 100V, 0.60 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power
field effect transistor is designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17501.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF9120
TO-205AF
IRFF9120
NOTE: When ordering, use the entire part number.
Features
• 4A, 100V
• rDS(ON) = 0.60
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
4-94
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 page




IRFF9120 pdf
IRFF9120
Typical Performance Curves (Continued)
1.25
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400
CRSS = CGD
COSS CDS + CGD
CISS
300
COSS
200
100
CRSS
0
0 -10 -20 -30 -40 -50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3 TJ = 25oC
2
1
TJ = -55oC
TJ = 125oC
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-10 TJ = 150oC
TJ = 25oC
-1
0
0 -2 -4 -6 -8 -10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
0
-5
-0.1
-0.4
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
ID = -8A
-10 VDS = -80V
VDS = -50V
-15 VDS = -20V
-20
0
4 8 12 16
Qg(TOT), TOTAL GATE CHARGE (nC)
20
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-98

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