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IRFE9110 fiches techniques PDF

Seme LAB - P-CHANNEL POWER MOSFET

Numéro de référence IRFE9110
Description P-CHANNEL POWER MOSFET
Fabricant Seme LAB 
Logo Seme LAB 





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IRFE9110 fiche technique
IRFE9110
MECHANICAL DATA
Dimensions in mm (inches)
1.27 (0.050)
1.07 (0.040)
7.62 (0.300)
7.12 (0.280)
11
10
9
8
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
76543
1.39 (0.055)
1.15 (0.045)
1.65 (0.065)
1.40 (0.055)
0.33
0.08
(0.013)
(0.003)
Rad.
0.43 (0.017)
0.18 (0.007 Rad.
2.16 (0.085)
MOSFET
GATE
DRAIN
SOURCE
LCC4
TRANSISTOR
BASE
COLLECTOR
EMITTER
PINS
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
P–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
-100V
-2.2A
1.2W
FEATURES
• SURFACE MOUNT
• SMALL FOOTPRINT
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
LIGHT WEIGHT
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current @ Tcase = 25°C
– 2.2A
ID Continuous Drain Current @ Tcase = 100°C
– 1.4A
IDM Pulsed Drain Current
– 8.8A
PD Power Dissipation @ Tcase = 25°C
11W
Linear Derating Factor
0.090W/°C
EAS
dv/dt
Single Pulse Avalanche Energy 2
Peak Diode Recovery 3
87mJ
– 5.5V/ns
TJ , Tstg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
– 55 to +150°C
300°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
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