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IRFDC20 fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=0.32A)

Numéro de référence IRFDC20
Description Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=0.32A)
Fabricant International Rectifier 
Logo International Rectifier 





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IRFDC20 fiche technique
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HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
Simple Drive Requirements
PD -9.1228
IRFDC20
VDSS = 600V
RDS(on) = 4.4
ID = 0.32A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
HD-1
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10 V
Continuous Drain Current, VGS @ 10 V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
0.32
0.20
2.6
1.0
0.0083
±20
50
0.32
0.10
3.0
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJA
Parameter
Junction-to-Ambient
Min.
Typ.
Max. Units
120 °C/W
To Order
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