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PDF IRFD210 Data sheet ( Hoja de datos )
| Número de pieza | IRFD210 | |
| Descripción | 0.6A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRFD210 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Data Sheet
IRFD210
July 1999 File Number 2316.3
0.6A, 200V, 1.500 Ohm, N-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These are
N-Channel enhancement mode silicon gate power field
effect transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers,
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power. They can be
operated directly from integrated circuits.
Formerly developmental type TA17442.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD210
HEXDIP
IRFD210
NOTE: When ordering, use the entire part number.
Features
• 0.6A, 200V
• rDS(ON) = 1.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
HEXDIP
GATE
DRAIN
SOURCE
4-281
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRFD210
Typical Performance Curves Unless Otherwise Specified (Continued)
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.2
2.4 TJ = -55oC
TJ = 25oC
1.6 TJ = 125oC
0.8
0
01 2 345
ID, DRAIN CURRENT (A)
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
10.0
5 TJ = 150oC
2 TJ = 25oC
1.0
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2
0.1
0
1234
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
5
20
ID = 2.5A
15
10
VDS = 40V
VDS = 100V
VDS = 160V
5
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
4-285
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRFD210.PDF ] | |
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