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IRFBC30L fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)

Numéro de référence IRFBC30L
Description Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)
Fabricant International Rectifier 
Logo International Rectifier 





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IRFBC30L fiche technique
PD- 91890B
SMPS MOSFET IRFBC30AS/L
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
HEXFET® Power MOSFET
VDSS
600V
Rds(on) max ID
2.2
3.6A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified (See AN 1001)
D 2 Pak
T O -26 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V†
Continuous Drain Current, VGS @ 10V†
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
3.6
2.3
14
74
0.69
± 30
7.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topology:
l Single transistor Flyback
Notes  through … are on page 10
www.irf.com
1
5/4/00

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