DataSheetWiki


IRFBA1404P fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=40V/ Rds(on)=3.7mohm/ Id=206A)

Numéro de référence IRFBA1404P
Description Power MOSFET(Vdss=40V/ Rds(on)=3.7mohm/ Id=206A)
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRFBA1404P fiche technique
PD - 93806
AUTOMOTIVE MOSFET IRFBA1404P
Typical Applications
l Anti-lock Braking Systems (ABS)
l Electric Power Steering (EPS)
l Electric Braking
l Radiator Fan Control
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Increase Current Handling Capability
G
l 175°C Operating Temperature
l Fast Switching
l Dynamic dv/dt Rating
l Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this MOSFET are a 175oC junction operating
temperature, fast switching speed and improved ruggedness in
single and repetitive avalanche. The Super-220 TM is a package that
has been designed to have the same mechanical outline and pinout
as the industry standard TO-220 but can house a considerably
larger silicon die. The result is significantly increased current
handling capability over both the TO-220 and the much larger TO-
247 package. The combination of extremely low on-resistance
silicon and the Super-220 TM package makes it ideal to reduce the
component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed
to meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
www.irf.com
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 3.7m
ID = 206A†
S
Super-220™
Max.
206†
145†
650
300
2.0
± 20
See Fig.12a, 12b, 15, 16
30
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
1
10/24/00

PagesPages 9
Télécharger [ IRFBA1404P ]


Fiche technique recommandé

No Description détaillée Fabricant
IRFBA1404 Power MOSFET(Vdss=40V/ Rds(on)=3.7mohm/ Id=206A) International Rectifier
International Rectifier
IRFBA1404P Power MOSFET(Vdss=40V/ Rds(on)=3.7mohm/ Id=206A) International Rectifier
International Rectifier
IRFBA1404PPBF Power MOSFET ( Transistor ) International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche