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PDF IRFB16N60L Data sheet ( Hoja de datos )
| Número de pieza | IRFB16N60L | |
| Descripción | SMPS MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 94631A
SMPS MOSFET IRFB16N60L
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 385mΩ 130ns 16A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
16
10
60
310
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
2.5
±30
11
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 16
MOSFET symbol
D
(Body Diode)
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
www.irf.com
A showing the
––– ––– 60
integral reverse
G
––– ––– 1.5
fp-n junction diode.
V TJ = 25°C, IS = 16A, VGS = 0V
S
––– 130 200 ns TJ = 25°C, IF = 16A
f––– 240 360
TJ = 125°C, di/dt = 100A/µs
f––– 450 670 nC TJ = 25°C, IS = 16A, VGS = 0V
f––– 1080 1620
TJ = 125°C, di/dt = 100A/µs
––– 5.8 8.7 A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
10/19/04
1 page  
IRFB16N60L
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1 1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10msec
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
18
16
14
12
10
8
6
4
2
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 10. Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 11a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11b. Switching Time Waveforms
www.irf.com
5
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| PDF Descargar | [ Datasheet IRFB16N60L.PDF ] | |
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