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Número de pieza | IRFB13N50A | |
Descripción | Power MOSFET(Vdss=500V/ Rds(on)max=0.450ohm/ Id=14A) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! PD - 94339
SMPS MOSFET IRFB13N50A
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
VDSS
500V
HEXFET® Power MOSFET
RDS(on) max
ID
0.450 Ω
14A
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
Max.
14
9.1
56
250
2.0
± 30
9.2
-55 to + 150
300
10
Units
A
W
W/°C
V
V/ns
°C
lbf•in (1.1N•m)
Typ.
–––
–––
–––
Max.
560
14
25
Units
mJ
A
mJ
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
°C/W
1
12/10/01
1 page IRFB13N50A
15
12
9
6
3
0
25 50 75 100 125 150
TC , Case Temperature
( ° C)
Fig 9. Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/t 2
2. Peak T J = P DM x Z thJC + T C
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFB13N50A.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFB13N50A | Power MOSFET(Vdss=500V/ Rds(on)max=0.450ohm/ Id=14A) | International Rectifier |
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