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Numéro de référence | IRFB11N50A | ||
Description | Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD- 91809B
SMPS MOSFET IRFB11N50A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
HEXFET® Power MOSFET
VDSS
500V
Rds(on) max
0.52Ω
ID
11A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-220AB G D S
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
11
7.0
44
170
1.3
± 30
6.9
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies:
l Two Transistor Forward
l Half & Full Bridge
l Power Factor Correction Boost
Notes through
are on page 8
www.irf.com
1
3/30/99
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Pages | Pages 8 | ||
Télécharger | [ IRFB11N50A ] |
No | Description détaillée | Fabricant |
IRFB11N50 | Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A) | International Rectifier |
IRFB11N50A | Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A) | International Rectifier |
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