DataSheetWiki


IRFB11N50A fiches techniques PDF

International Rectifier - Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)

Numéro de référence IRFB11N50A
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





IRFB11N50A fiche technique
PD- 91809B
SMPS MOSFET IRFB11N50A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
HEXFET® Power MOSFET
VDSS
500V
Rds(on) max
0.52
ID
11A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-220AB G D S
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
11
7.0
44
170
1.3
± 30
6.9
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies:
l Two Transistor Forward
l Half & Full Bridge
l Power Factor Correction Boost
Notes  through … are on page 8
www.irf.com
1
3/30/99

PagesPages 8
Télécharger [ IRFB11N50A ]


Fiche technique recommandé

No Description détaillée Fabricant
IRFB11N50 Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A) International Rectifier
International Rectifier
IRFB11N50A Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A) International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche