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PDF IRF9952 Data sheet ( Hoja de datos )
| Número de pieza | IRF9952 | |
| Descripción | Power MOSFET(Vdss=+-30V) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF9952 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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PD - 9.1561A
PRELIMINARY
IRF9952
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
N -C HA NN EL MOSF ET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P -CH AN N EL M OSF ET
T o p V iew
N-Ch P-Ch
VDSS 30V -30V
RDS(on) 0.10Ω 0.25Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509
S O -8
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
V DS
VGS
ID
IDM
IS
PD
EAS
IAR
EAR
dv/dt
TJ, TSTG
Maximum
N-Channel P-Channel
30
± 20
3.5 -2.3
2.8 -1.8
16 -10
1.7 -1.3
2.0
1.3
44 57
2.0 -1.3
0.25
5.0 -5.0
-55 to + 150 °C
Units
V
A
W
mJ
A
mJ
V/ ns
Symbol
RθJA
Limit
62.5
Units
°C/W
8/25/97
1 page  
N-Channel
IRF9952
350
VGS = 0V,
f = 1MHz
C is s = C gs + C gd , Cds SH O RTE D
300 Crss = C gd
Co ss = Cds + C g d
250 C is s
200 C os s
150
100 C rss
50
0A
1 10 100
V D S , Drain-to-Source V oltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 1.8A
16
VDS = 10V
12
8
4
0
0 2 4 6 8 10
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
t1
t2
Notes:
1. Duty factor D = t 1/ t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF9952.PDF ] | |
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